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IGBT module, also known as insulated gate bipolar transistor, is widely used in high-speed rail, subway, new energy vehicles, wind power and other fields. Using AlSiC as the IGBT power device heat dissipation substrate, instead of oxygen-free copper, aluminum base plate, can greatly improve the reliability of power devices.
IGBT module, also known as insulated gate bipolar transistor, is widely used in high-speed rail, subway, new energy vehicles, wind power and other fields. Using AlSiC as the IGBT power device heat dissipation substrate, instead of oxygen-free copper, aluminum base plate, can greatly improve the reliability of power devices.
IGBT module, also known as insulated gate bipolar transistor, is widely used in high-speed rail, subway, new energy vehicles, wind power and other fields. Using AlSiC as the IGBT power device heat dissipation substrate, instead of oxygen-free copper, aluminum base plate, can greatly improve the reliability of power devices.
IGBT module, also known as insulated gate bipolar transistor, is widely used in high-speed rail, subway, new energy vehicles, wind power and other fields. Using AlSiC as the IGBT power device heat dissipation substrate, instead of oxygen-free copper, aluminum base plate, can greatly improve the reliability of power devices.
IGBT module, also known as insulated gate bipolar transistor, is widely used in high-speed rail, subway, new energy vehicles, wind power and other fields. Using AlSiC as the IGBT power device heat dissipation substrate, instead of oxygen-free copper, aluminum base plate, can greatly improve the reliability of power devices.
IGBT module, also known as insulated gate bipolar transistor, is widely used in high-speed rail, subway, new energy vehicles, wind power and other fields. Using AlSiC as the IGBT power device heat dissipation substrate, instead of oxygen-free copper, aluminum base plate, can greatly improve the reliability of power devices.
IGBT module, also known as insulated gate bipolar transistor, is widely used in high-speed rail, subway, new energy vehicles, wind power and other fields. Using AlSiC as the IGBT power device heat dissipation substrate, instead of oxygen-free copper, aluminum base plate, can greatly improve the reliability of power devices.
IGBT module, also known as insulated gate bipolar transistor, is widely used in high-speed rail, subway, new energy vehicles, wind power and other fields. Using AlSiC as the IGBT power device heat dissipation substrate, instead of oxygen-free copper, aluminum base plate, can greatly improve the reliability of power devices.
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