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Aluminum silicon carbide as an airtight tube housing package, has good thermal conductivity, can greatly reduce the weight of the package, while the cost is reduced. In power electronics, power microwave, photoelectric conversion, communication base station signal amplifier, hybrid circuit and other fields, it has unparalleled performance advantages, compared with traditional metal, ceramic and other packaging materials.
IGBT module, also known as insulated gate bipolar transistor, is widely used in high-speed rail, subway, new energy vehicles, wind power and other fields.
Using AlSiC as the IGBT power device heat dissipation substrate, instead of oxygen-free copper, aluminum base plate, can greatly improve the reliability of power devices.
IGBT module, also known as insulated gate bipolar transistor, is widely used in high-speed rail, subway, new energy vehicles, wind power and other fields.
Using AlSiC as the IGBT power device heat dissipation substrate, instead of oxygen-free copper, aluminum base plate, can greatly improve the reliability of power devices.
AlSiC has great potential in military and civil microelectronics applications due to its low thermal expansion, high thermal conductivity, light weight and high stiffness.
AlSiC has great potential in military and civil microelectronics applications due to its low thermal expansion, high thermal conductivity, light weight and high stiffness.
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