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IGBT module, also known as insulated gate bipolar transistor, is widely used in high-speed rail, subway, new energy vehicles, wind power and other fields. Using AlSiC as the IGBT power device heat dissipation substrate, instead of oxygen-free copper, aluminum base plate, can greatly improve the reliability of power devices.
AlSiC has great potential in military and civil microelectronics applications due to its low thermal expansion, high thermal conductivity, light weight and high stiffness.
AlSiC can be used in thermal deformation resistant structural component, wear resistant structural component, lightweight aerospace structural component, ect.
AlSiC can be used in thermal deformation resistant structural component, wear resistant structural component, lightweight aerospace structural component, ect.
AlSiC has great potential in military and civil microelectronics applications due to its low thermal expansion, high thermal conductivity, light weight and high stiffness.
IGBT module, also known as insulated gate bipolar transistor, is widely used in high-speed rail, subway, new energy vehicles, wind power and other fields. Using AlSiC as the IGBT power device heat dissipation substrate, instead of oxygen-free copper, aluminum base plate, can greatly improve the reliability of power devices.
AlSiC has great potential in military and civil microelectronics applications due to its low thermal expansion, high thermal conductivity, light weight and high stiffness.
AlSiC has great potential in military and civil microelectronics applications due to its low thermal expansion, high thermal conductivity, light weight and high stiffness.
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